![]() Bhoj, IEEE VLSI, Vol 21, N☁1, 2013ħ The FinFET device has a different layout style than the MOS deviceįROM MOSFET TO FINFET >= 20nm Convert into FinFET creates fins from N-diffusion Only works for vertical gates Generate fins according to fin pitch (r308)Ģ9 COMPILE LOGIC GATES The cell compiler enables direct logic gate compilation, including dummy gates, 2 or 4 fins. Schuddinck, IEDM 2012 3-D-TCAD-Based Parasitic Capacitance Extraction for Emerging Multigate Devices and Circuits Ajay N. ![]() Smaller Faster Less power consumption Cheaper (if you fabricate millions) 65nm 28nm 14nm Power -50% -80% 65nm 28nm 14nmĦ MICROWIND FINFET Microwind’s FinFET implementation based on a selection of 10 scientific publications The FinFET is used starting 14-nm node Layout, size and performances inspired from “average” 14-nm FinFET Scaling to 10-nm & 7-nm nodes Application note in progress Standard cell level parasitics assessment in 20nm BPL and 14nm BFF P. ![]() Presentation on theme: "14NM FINFET IN MICROWIND."- Presentation transcript:Īn application note on 14-nm FinFET has been released in June 2017 Microwind 3.8 has been configured to simulate FinFET design Technology parameters are close to 14-nm from Intel The rule file cmos14nm.RUL is available atġ4-nm Exynos by Samsung™ 14-nm Xeon by Intel ™ 14-nm Snapdragon by Qualcomm™ 14-nm Zen Processor by AMD™ĥ 65nm 28nm 14nm Power -50% -80% 65nm 28nm 14nm SCALE DOWN BENEFITS ![]()
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